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BU118 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BU118.

General Description

·Excellent Safe Operating Area VCE:200V ICM:7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V THERMAL CHARACTERISTICS VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25℃ 60 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.08 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC=30mA ;

IB=0 VCBO Collector-Base Sustaining Voltage IC=1mA ;

IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;

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