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Inchange Semiconductor

BUL44 Datasheet Preview

BUL44 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL44
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.6V(Max) @ IC= 1.0A
APPLICATIONS
·Designed for use in 220V line operated switchmode power
Supplies and electronic light ballasts.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
700 V
VCEO Collector-Emitter Voltage
400 V
VEBO Emitter-Base Voltage
9V
IC Collector Current-Continuous
2A
ICM Collector Current-peak
5A
IB Base Current-Continuous
1A
IBM Base Current-peak
PC
Collector Power Dissipation
TC=25
Ti Junction Temperature
Tstg Storage Temperature Range
2
50
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
2.5 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

BUL44 Datasheet Preview

BUL44 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL44
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH
VCE(sat)-1
VCE(sat)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 0.4A ;IB= 40mA
IC= 0.4A ;IB= 40mA,TC= 125
IC= 1A ;IB= 0.2A
IC= 1A ;IB= 0.2A,TC= 125
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 0.4A ;IB= 40mA
400
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 1A ;IB= 0.2A
ICEO Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= RatedVCEO; IB= 0
VCE= RatedVCES;VEB=0
VCE= RatedVCES;VEB=0,TC= 125
VCE= 500V; VEB=0,TC= 125
VEB= 9V; IC= 0
V
0.5
0.5
V
0.6
0.6
V
1.1 V
1.25 V
0.1 mA
0.1
0.5 mA
0.1
0.1 mA
hFE-1
DC Current Gain
IC= 0.2 A; VCE= 5V
14 34
hFE-2
DC Current Gain
IC= 0.4A; VCE= 1V
12
hFE-3
DC Current Gain
IC= 1A; VCE= 1V
8
hFE-4
DC Current Gain
IC= 10mA; VCE= 5V
10
COB Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
60 pF
fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
13 MHz
Switching Times , Resistive Load
ton Turn-On Time
toff Turn-Off Time
td Storage Time
tr Fall Time
IC= 0.4A; VCC= 300V;
IB1= 40mA;IB2= 0.2A;
tp= 20μs; Duty Cycle10%
IC= 1A; VCC= 300V;
IB1= 0.2A; IB2= 0.5A;
tp= 20μs; Duty Cycle10%
0.1 μs
2.5 μs
0.15 μs
2.5 μs
isc websitewww.iscsemi.cn
2


Part Number BUL44
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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