Datasheet Details
| Part number | BUL49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.20 KB |
| Description | NPN Transistor |
| Datasheet | BUL49-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.20 KB |
| Description | NPN Transistor |
| Datasheet | BUL49-INCHANGE.pdf |
|
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Very High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic transformers for halogen lamps ·Flyback and forward single transistor low power converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W BUL49 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL49 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL49A | NPN Transistor | Seme LAB |
 |
BUL49D | NPN Transistor | STMicroelectronics |
 |
BUL49D | Silicon NPN Power Transistor | Inchange Semiconductor |
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