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BUL49D - NPN Transistor

General Description

The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

The devices are designed for use in electronic transformer for halogen lamps.

Figure 1.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.
  • High ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUL49D BULB49D High voltage fast-switching NPN power transistors Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness Applications ■ Electronic transformers for halogen lamps ■ Flyback and forward single transistor low power converters Description The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. The devices are designed for use in electronic transformer for halogen lamps. 3 2 1 TO-220 3 2 1 TO-220FP 3 1 D2PAK 123 I2PAK Figure 1. Internal schematic diagram Table 1.