Datasheet Details
| Part number | BUL49D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.84 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL49D-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BUL49D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.84 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL49D-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Electronic transformers for halogen lamps ·Flyback and forward single transistor low power converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 10 A 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4 80 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.56 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL49D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL49D | NPN Transistor | STMicroelectronics |
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BUL49 | NPN Transistor | INCHANGE |
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BUL49A | NPN Transistor | Seme LAB |
| Part Number | Description |
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| BUL57 | Silicon NPN Power Transistor |
| BUL58B | Silicon NPN Power Transistor |
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