BUL49A
BUL49A is NPN Transistor manufactured by Seme LAB.
FEATURES
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple Guard Rings for improved control of high voltages.
16.97 (0.668) 16.87 (0.664)
TO3
Pin 1
- Base Pin 2
- Emitter Case is Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) Ptot Tstg Rth Semelab plc. Collector
- Base Voltage Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Thermal Resistance (junction-case)
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk
600V 300V 10V 25A 40A 200W
- 65 to 175°C Max. 0.7°CW
Prelim. 4/99
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
Test Conditions
Min.
300 600 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector
- Emitter Sustaining Voltage IC = 10m A Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Collector
- Base Cut- Off Current Collector
- Emitter Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 600V TC = 125°C IB = 0 VEB = 5V IC = 0 IC = 2A IC = 10A IC = 15A IC = 2A TC = 125°C VCE = 4V VCE = 4V VCE = 4V TC = 125°C IB = 0.2A IB = 1A IB = 1.5A IB = 1A IB = 1.5A VCE = 4V f = f = 10MHz VCE = 300V
V 10 100 100 10 100 m A m A m A
30 20 15
55 28 20 0.07 0.4 1.2 1.1 1.4 0.2 0.7 1.5 1.3 2 V V
- h FE-
DC Current Gain
VCE(sat)-...
