BUL49A Overview
BUL49A Dimensions in mm 40.01 (1.575) Max. ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia.
BUL49A Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple Guard Rings for improved control of high voltages
- Base Pin 2
- Emitter Case is Collector
