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Inchange Semiconductor

BUX41N Datasheet Preview

BUX41N Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX41N
DESCRIPTION
· Collector-Emitter Voltage-
: VCEO= 160V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VCEX
VCER
VEBO
IC
ICM
IB
PC
TJ
Tstg
Collector-Base Voltage
220 V
Collector-Emitter Voltage
160 V
Collector-Emitter Voltage VBE= -1.5V
Collector-Emitter Voltage RBE= 100Ω
220
200
V
V
Emitter-Base Voltage
7V
Collector Current-Continuous
18 A
Collector Current-Peak
25 A
Base Current-Continuous
Collector Power Dissipation
@TC=100
Junction Temperature
3.6 A
120 W
200
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 /W
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

BUX41N Datasheet Preview

BUX41N Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX41N
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0, L= 25mH
160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE=50mA; IC= 0
7V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A; IB=0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=12A; IB=1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=12A; IB=1.5A
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE=130V; IB= 0
VCE= 220V; VBE= -1.5V
VCE= 220V; VBE= -1.5V; TC= 125
VEB= 5V; IC=0
1.2 V
1.6 V
2.0 V
1.0 mA
1.0
5.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
15 45
hFE-2
DC Current Gain
IC= 12A ; VCE= 4V
8
fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; f=10MHz
8
MHz
Switching Times; Resistive Laod
ton Turn-on Time
ts Storage Time
tf Fall Time
IC= 12A ;IB1= -IB2= 1.5A;
VCC= 30V;
RB= 3.9Ω; RC= 2.5Ω
1.3 μs
1.5 μs
0.8 μs
isc websitewww.iscsemi.cn
2


Part Number BUX41N
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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