Datasheet4U Logo Datasheet4U.com

IRF3205 - N-Channel MOSFET Transistor

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤8.0mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3205 N-Channel Trench Process Power MOSFET Transistor Thinki Semiconductor
IRF3205 Power MOSFET International Rectifier
IRF3205 N-Channel Power MOSFET nELL
IRF3205 Power MOSFET Kexin
IRF3205A N-Channel Power MOSFET nELL

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF320 N-Channel MOSFET Transistor
IRF321 N-Channel MOSFET Transistor
IRF322 N-Channel MOSFET Transistor
IRF323 N-Channel MOSFET Transistor
IRF305 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 390 PD Total Dissipation @TC=25℃ 200 Tj Max.
Published: |