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Inchange Semiconductor

IRF3710 Datasheet Preview

IRF3710 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
·FEATURES
·Drain Current ID=57A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 25mΩ(Max)
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based
on half bridge.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±20
V
V
ID Drain Current-Continuous
57 A
IDM Drain Current-Single Plused
230 A
PD Total Dissipation @TC=25
200 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.75
62
/W
/W
isc websitewww.iscsemi.cn
1
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

IRF3710 Datasheet Preview

IRF3710 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 25A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
VSD Forward On-Voltage
IS= 28A; VGS=0
MIN MAX UNIT
100 V
24V
0.025
Ω
±100
nA
25 uA
1.2 V
·
isc websitewww.iscsemi.cn
2
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF3710
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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