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Inchange Semiconductor

IRF630FI Datasheet Preview

IRF630FI Datasheet

N-Channel Mosfet Transistor

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·RDS(on) =0.4Ω
·6A and 200V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF630FI
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
6A
IDM Drain Current-Single Plused
24 A
PD Total Dissipation @TC=25
35 W
Tj Max. Operating Junction Temperature -55~150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

IRF630FI Datasheet Preview

IRF630FI Datasheet

N-Channel Mosfet Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF630FI
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 5A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS=0
VSD Forward On-Voltage
IS= 6A; VGS=0
MIN TYP
MAX UNIT
200 V
2 4V
0.4 Ω
±500 nA
250 uA
2.0 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF630FI
Description N-Channel Mosfet Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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