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Inchange Semiconductor

IRFBC30 Datasheet Preview

IRFBC30 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·High current ,high speed switching
·Switch mode power supplies
·DC-AC converters for welding equipment and
Uninterruptible power supplies and motor
Driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±20
V
V
ID Drain Current-Continuous
3.6 A
IDM Drain Current-Single Pluse
14 A
PD Total Dissipation @TC=25
75 W
TJ Max. Operating Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1.7 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

IRFBC30 Datasheet Preview

IRFBC30 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=2.2A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD Forward On-Voltage
IS= 3.6A; VGS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN MAX UNIT
600 V
24V
2.2 Ω
±100
nA
1 μA
1.6 V
475 pF
72 pF
10 pF
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRFBC30
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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