IRFBC30 Key Features
- Lower Input Capacitance -Improved Gate Charge -Extended Safe Operating Area -Rugged Gate Oxide Technology
- Part: IRFBC30
- Manufacturer: Inchange Semiconductor (official site)
- Size: 54.55 KB
Other IRFBC30 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRFBC30 | N-Channel Power MOSFET |
International Rectifier |
IRFBC30 | Power MOSFET |
Vishay |
IRFBC30 | Power MOSFET |
Inchange Semiconductor |
IRFBC30 | TO-220 N-Channel MOSFET |
|
International Rectifier |
IRFBC30A | Power MOSFET |
IRFBC30 Description
·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 75 W TJ Max. Operating Junction Temperature...