| Part Number | IRFBC30 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg. o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 20 3.6 2.3 14 75 0.6 3 -65 to 150 150 ( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VD. |