IRFBC30 Datasheet and Specifications PDF

The IRFBC30 is a N-Channel Power MOSFET.

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Part NumberIRFBC30 Datasheet
ManufacturerSTMicroelectronics
Overview The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg. o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 20 3.6 2.3 14 75 0.6 3 -65 to 150 150 ( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VD.
Part NumberIRFBC30 Datasheet
DescriptionTO-220C N-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology DESCRIPTION
*High current ,high speed switching
*Switch mode power supplies
*DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATIN.
Part NumberIRFBC30 Datasheet
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview . .
Part NumberIRFBC30 Datasheet
DescriptionTO-220 N-Channel MOSFET
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor IRFBC30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-.
*Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX)
*Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.