IRFS640A - N-Channel MOSFET Transistor

Inchange Semiconductor

IRFS640A Datasheet Preview — Preview of IRFS640A PDF

Datasheet Details

Part number	IRFS640A
Manufacturer	Inchange Semiconductor
File Size	53.29 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFS640A-InchangeSemiconductor.pdf

IRFS640A Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±30 V V 9.8 A 72 A 43 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resis

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current : 10 A (Max. ) @ VDS = 200V.

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Published: Aug 10, 2016 |