KSD5004 Overview
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
| Part number | KSD5004 |
|---|---|
| Datasheet | KSD5004 Datasheet PDF (Download) |
| File Size | 122.85 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
|
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| KSD5004 | NPN Triple Diffused Planar Silicon Transistor | Samsung semiconductor |