KSD5006 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5006
- Manufacturer: Inchange Semiconductor
- Size: 122.86 KB
Related Inchange Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KSD5000 | Silicon NPN Power Transistor |
| KSD5001 | Silicon NPN Power Transistor |
| KSD5002 | Silicon NPN Power Transistor |
| KSD5003 | Silicon NPN Power Transistor |
| KSD5004 | Silicon NPN Power Transistor |