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Inchange Semiconductor

KSD5006 Datasheet Preview

KSD5006 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5006
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current- Continuous
5
A
ICP Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
16 A
120 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

KSD5006 Datasheet Preview

KSD5006 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5006
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tf Fall Time
IC= 4A , IB1= 0.8A ; IB2= -1.6A
RL= 50Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0 V
1.5 V
10 μA
1 mA
8
3 MHz
0.4 μs
isc websitewww.iscsemi.cn
2


Part Number KSD5006
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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KSD5006 Datasheet PDF





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