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MJ3738 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) High Switching Speed APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.
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