MJ3738 - Silicon PNP Power Transistor

Product Overview

Inchange Semiconductor

Part number	MJ3738
Manufacturer	Inchange Semiconductor
File Size	135.40 KB
Description	Silicon PNP Power Transistor
Datasheet	MJ3738 Datasheet
Additional preview pages of the MJ3738 datasheet.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) High Switching Speed APPLICATIONS

applications.

MJ3771 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)
MJ3772 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)
MJ3000 - 10 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MJ3000 - Bipolar NPN Device (Semelab PLC)
MJ3000 - Complementary Silicon Power Darlington Transistors (ST Microelectronics)
MJ3000 - Silicon NPN Power Transistors (SavantIC)
MJ3000 - (MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS (Comset Semiconductors)
MJ3000 - NPN Transistor (INCHANGE)
MJ3000 - NPN Transistor (DIGITRON)
MJ3000 - Silicon complementary trasistors (Central Semiconductor)

Other Datasheets by Inchange Semiconductor

Published: Nov 11, 2016 |