Datasheet Details
| Part number | MJD112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.64 KB |
| Description | Silicon NPN Power Transistor |
| Download | MJD112 Download (PDF) |
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| Part number | MJD112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.64 KB |
| Description | Silicon NPN Power Transistor |
| Download | MJD112 Download (PDF) |
|
|
|
·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range 100 V 100 V 5 V 2 A 4 A 50 mA 1.75 W 20 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A;
IB= 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJD112 | Silicon NPN epitaxial planer Transistors | MCC |
 |
MJD112 | NPN Silicon Darlington Transistor | Fairchild Semiconductor |
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MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | CDIL |
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MJD112 | NPN Transistor | JCET |
 |
MJD112 | Epitaxial Planar NPN Transistor | GME |
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