MJD127 - Silicon PNP Darlington Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	MJD127
Manufacturer	Inchange Semiconductor
File Size	215.94 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	MJD127 Datasheet
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Product details

Description

Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V

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Published: Nov 8, 2016 |