MJE13003A transistor equivalent, silicon npn power transistor.
*Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited .
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 1.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
Image gallery
TAGS
Manufacturer
Related datasheet