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MJE13007A Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-peak 16 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.56 UNIT ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A ;IB= 2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A ICBO Collector Cutoff Current VCB= 700V;

Overview

isc Silicon NPN Power Transistor MJE13007A.