Datasheet Details
| Part number | 2SD1770 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 213.46 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD1770 Download (PDF) |
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| Part number | 2SD1770 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 213.46 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD1770 Download (PDF) |
|
|
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·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 25 W 1.4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1770 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SD110 | Silicon NPN Power Transistor |
| 2SD1105 | Silicon NPN Power Transistor |
| 2SD1590 | Silicon NPN Darlington Power Transistor |
| 2SD1603 | Silicon NPN Darlington Power Transistor |
| 2SD1832 | Silicon NPN Darlington Power Transistor |