Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
- High DC Current Gain
: hFE= 2000(Min) @ IC= 3A
- plement to Type 2SB1099
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier and low speed switching industrial...