Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
High DC Current Gain
: hFE= 2000(Min) @ IC= 3A
Complement to Type 2SB1099
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power am
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isc Silicon NPN Darlington Power Transistor
2SD1590
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
12
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.
2SD1590 Datasheet
