High Power Dissipation
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
Complement to Type 2SB1190
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2
A
25 W
1.4
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1770
isc website：www.iscsemi.
2SD1770 Datasheet
