Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
- plement to Type 2SB1190
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications.
- TV vertical deflection output...