. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Undervoltage lockout (UVLO) .

* Certification: VDE 0884-11 5.7 kV (rms) for 1 min (File Ew3it1h13V1IO3R)M = 1767 V (peak) (Certificate no.

The 1ED31xxMC12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on separate source and sink pins or .

1ED3120MU12H

1ED3121MC12H

1ED3121MU12H

1ED3122MC12H

1ED3122MU12H

1ED3123MC12H

1ED3123MU12H

1ED3124MC12H

1ED3124MU12H

1ED3131MC12H

1ED3131MU12H

1ED3140MU12F

1ED3141MU12F