Datasheet Summary
CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET
Features
- Revolutionary semiconductor material
- Silicon Carbide
Gate pin 1
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-patible driving voltage (18V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and...