AIMW120R035M1H Datasheet 1200v Automotive Sic MOSFET

Manufacturer: Infineon

Overview: AIMW120R035M1H AIMW120R035M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide.

Datasheet Details

Part number	AIMW120R035M1H
Manufacturer	Infineon
File Size	1.00 MB
Description	1200V Automotive SiC MOSFET
Datasheet	AIMW120R035M1H-Infineon.pdf

Key Features

Revolutionary semiconductor material - Silicon Carbide Gate pin 1.
Very low switching losses.
Threshold-free on state characteristic.
IGBT-compatible driving voltage (18V for turn-on).
0V turn-off gate voltage.
Benchmark gate threshold voltage, VGS(th)=4.5V.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Temperature independent turn-off switching losses Bene.

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