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Infineon Technologies Electronic Components Datasheet

AUIRF1404Z Datasheet

Power MOSFET

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  AUIRF1404Z
AUTOMOTIVE GRADE
AUIRF1404ZS
AUIRF1404ZL
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
HEXFET® Power MOSFET
VDSS
40V
RDS(on) max.
3.7m
ID (Silicon Limited)
180A
ID (Package Limited)
160A
DD
S
GD
TO-220AB
AUIRF1404Z
G
Gate
S
G
D2Pak
AUIRF1404ZS
D
Drain
S
D
G
TO-262
AUIRF1404ZL
S
Source
Base part number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Quantity
50
50
50
800
Orderable Part Number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
AUIRF1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
180
120
160
710
200
1.3
± 20
330
480
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-11


Infineon Technologies Electronic Components Datasheet

AUIRF1404Z Datasheet

Power MOSFET

No Preview Available !

  AUIRF1404Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.033 ––– V/°C Reference to 25°C, ID = 1mA
––– 2.7 3.7 m VGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
170 ––– ––– S VDS = 25V, ID = 75A
–––
–––
–––
–––
20
250
µA
VDS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics  
––– 100 150
––– 31 –––
––– 42 –––
––– 18 –––
––– 110 –––
––– 36 –––
––– 58 –––
––– 4.5 –––
––– 7.5 –––
––– 4340 –––
––– 1030 –––
––– 550 –––
––– 3300 –––
––– 920 –––
––– 1350 –––
ID = 75A
nC   VDS = 32V
VGS = 10V
VDD = 20V
ns ID = 75A
RG= 3.0
VGS = 10V
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
pF  
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 160
––– ––– 750
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 75A,VGS = 0V 
––– 28 42 ns TJ = 25°C ,IF = 75A, VDD = 20V
––– 34 51 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.11mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.11mH, RG = 25, IAS = 75A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
TO-220 device will have an Rth value of 0.65°C/W.
Ris measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current limit is 160A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
2 2015-11-11


Part Number AUIRF1404Z
Description Power MOSFET
Maker Infineon
Total Page 13 Pages
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