AUIRF1404Z Datasheet | Infineon

Features - Advanced Process Technology - Ultra Low On-Resistance - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, Ro HS pliant - Automotive Qualified -   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET VDSS 40V RDS(on) max. 3.7m ID (Silicon Limited) 180A ID (Package Limited) 160A S GD TO-220AB AUIRF1404Z G Gate S G D2Pak AUIRF1404ZS D Drain S D G TO-262 AUIRF1404ZL S...