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AUIRF7749L2TR - Power MOSFET

Download the AUIRF7749L2TR datasheet PDF. This datasheet also covers the AUIRF7749L2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (AUIRF7749L2-Infineon.pdf) that lists specifications for multiple related part numbers.

General Description

The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile.

The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET™ package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Overview

AUTOMOTIVE GRADE AUIRF7749L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Allowed up to Tjmax  Lead Free, RoHS Compliant and Halogen Free  Automotive Qualified * Automotive DirectFET™ Power MOSFET  V(BR)DSS RDS(on) typ.

max.

ID (Silicon Limited) Qg 60V 1.1m 1.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.