AUIRF7749L2TR Datasheet | Infineon

Description The AUIRF7749L2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET™ packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The Direct FET™ package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET™ package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET™ packaging platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number AUIRF7749L2 Direct FET™ Large Can Tape and Reel Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are...