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Infineon Technologies Electronic Components Datasheet

AUIRFS4127 Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRFS4127
AUIRFSL4127
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
 D
G
S
D
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
200V
18.6m
22m
72A
D
G
Gate
S
G
D2Pak
AUIRFS4127
D
Drain
S
D
G
TO-262
AUIRFSL4127
S
Source
Base part number
AUIRFSL4127
AUIRFS4127
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4127
AUIRFS4127
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
72
51
300
375
2.5
± 20
57
250
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C  
300(1.6mm from case)  
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case 
RJA Junction-to-Ambient
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-27


Infineon Technologies Electronic Components Datasheet

AUIRFS4127 Datasheet

Power MOSFET

No Preview Available !

  AUIRFS/SL4127
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.23 ––– V/°C Reference to 25°C, ID = 5mA
––– 18.6 22 m VGS = 10V, ID = 44A
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
gfs Forward Trans conductance
79 ––– ––– S VDS = 50V, ID = 44A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
 
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA  
VGS = 20V
VGS = -20V
RG Internal Gate Resistance
––– 3.0 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 100 150
––– 30 –––
––– 31 –––
––– 69 –––
ID = 44A
nC  
VDS = 100V
VGS = 10V
td(on) Turn-On Delay Time
––– 17 –––
tr Rise Time
––– 18 –––
td(off) Turn-Off Delay Time
––– 56 –––
tf Fall Time
––– 22 –––
Ciss Input Capacitance
––– 5380 –––
Coss Output Capacitance
––– 410 –––
Crss Reverse Transfer Capacitance
––– 86 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 360 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 590 –––
VDD = 130V
ns
ID = 44A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0 MHz (See Fig. 5)
VGS = 0V, VDS = 0V to 160V
VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr   Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
   
 
Min. Typ. Max. Units
Conditions
––– ––– 72
––– ––– 300
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3
––– 136 –––
––– 139 –––
––– 458 –––
––– 688 –––
––– 8.3 –––
V TJ = 25°C, IS = 44A, VGS = 0V
ns
nC
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 100V,
IF = 44A
di/dt = 100A/µs
A TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.26mH, RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value.
ISD 44A, di/dt 760A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Ris measured at TJ approximately 90°C.
RJC value shown is at time zero.
2 2015-10-27


Part Number AUIRFS4127
Description Power MOSFET
Maker Infineon
Total Page 11 Pages
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