AUIRFS4127 Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
AUIRFS4127 Key Features
- Advanced Process Technology - Ultra Low On-Resistance -175°C Operating Temperature -Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS pliant
- Automotive Qualified
- Description