AUIRFS4310
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
AUIRFS4310 AUIRFSL4310
HEXFET® Power MOSFET
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
100V 5.6m 7.0m 130A
75A
D2Pak AUIRFS4310
S GD
TO-262 AUIRFSL4310
G Gate
D Drain
S Source
Base part number...
