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BSC060P03NS3EG - Power-MOSFET

Key Features

  • single P-Channel in SuperSO8.
  • Qualified according JEDEC1) for target.

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Full PDF Text Transcription for BSC060P03NS3EG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC060P03NS3EG. For precise diagrams, and layout, please refer to the original PDF.

OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC1) for target applications • 150 °C operating temperature • 100% Avalanch...

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for target applications • 150 °C operating temperature • 100% Avalanche rated • V GS=25 V, specially suited for notebook applications • ESD protected • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 BSC060P03NS3E G Product Summary V DS R DS(on),max ID -30 V 6.

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