Datasheet Summary
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
- Dual-sidecooledpackagewithlowestjunction-topthermalresistance
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Verylowreverserecoverycharge(Qrr)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- Idealforhigh-frequencyswitchingandsynchronousrectification
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
9.3 mΩ
Qrr
58 nC
PG-WSON-8 tab 4
3 2 1
5 6 7 8
Drain Pin 5-8
Gate Pin 4
Source Pin...