900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

BSC100N06LS3G Datasheet

Power-Transistor

No Preview Available !

Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC100N06LS3 G
BSC100N06LS3 G
Product Summary
VDS
RDS(on),max
ID
60 V
10 mW
50 A
Package
PG-TDSON-8
Marking
100N06LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
50 A
36
V GS=4.5 V, T C=25 °C
41
V GS=4.5 V,
T C=100 °C
26
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
12
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
22 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.3
page 1
2013-05-21


Infineon Technologies Electronic Components Datasheet

BSC100N06LS3G Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC100N06LS3 G
Value
50
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
-
-
-
- 2.5 K/W
- 62
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=23 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=25 A
V GS=10 V, I D=50 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
60
1.2
-
-
-
-
-
-
32
- -V
1.7 2.2
0.1 1 µA
10 100
10 100 nA
11.8 17.9 mW
7.8 10
1.3 - W
63 - S
Rev. 2.3
page 2
2013-05-21


Part Number BSC100N06LS3G
Description Power-Transistor
Maker Infineon
PDF Download

BSC100N06LS3G Datasheet PDF






Similar Datasheet

1 BSC100N06LS3G Power-Transistor
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy