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BSZ0901NS
MOSFET
OptiMOSTMPower-MOSFET,30V
Features
•OptimizedforhighperformanceBuckconverter(Server,VGA) •VeryLowFOMQOSSforHighFrequencySMPS •LowFOMSWforHighFrequencySMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max,VGS=10V 2
mΩ
RDS(on),max,VGS=4.5V 2.