BUZ103S - SIPMOS Power Transistor

Infineon

Key Features

N channel.
Enhancement mode.
Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current.
dv/dt rated.
175 ˚C operating temperature VDS RDS(on) ID 55 0.036 31 V Ω A Type BUZ103S BUZ103S E3045A BUZ103S E3045 Package Ordering Code Packaging P-TO220-3-1 Q67040-S4009-A2 Tube P-TO263-3-2 Q67040-S4009-A6 Tape and Reel P-TO263-3-2 Q67040-S4009-A5 Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings at Tj =.

BUZ103S sipmos power transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	BUZ103S
Manufacturer	Infineon
File Size	120.72 KB
Description	SIPMOS Power Transistor
Datasheet	BUZ103S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BUZ103S	Power Transistor	Siemens Semiconductor Group
BUZ103SL	Power Transistor	Siemens Semiconductor Group
BUZ103SL-4	Power Transistor	Siemens Semiconductor Group
BUZ103	Power Transistor	Siemens Semiconductor Group
BUZ103AL	Power Transistor	Siemens Semiconductor Group

More Datasheets from Infineon

Part Number	Description
BUZ102S	Power Transistor
BUZ30AH	Power Transistor
BUZ31H	Power-Transistor
BUZ31H3045A	Power-Transistor
BUZ31H3046	Power-Transistor
BUZ73LH	Power Transistor
BUZ80A	Power Transistor

Full PDF Text Transcription for BUZ103S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUZ103S. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text

BUZ 103S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated • 175 ˚C operating temperature VDS RDS(on) ID 55 0.