BUZ103S Description
BUZ 103S SIPMOS Power Transistor.
BUZ103S Key Features
- N channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175 ˚C operating temperature
- 55... +175 55/175/56
- case Thermal resistance, junction
- ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1)
- 10 100 nA
- 0.03 0.036