CY15V116QSN, CY15B116QSN Datasheet - Infineon

CY15V116QSN, CY15B116QSN, 16Mb Ultra Ferroelectric RAM

* Low-voltage operation: - CY15V116QSN: VDD = 1.71 V to 1.89 V - CY15B116QSN: VDD = 1.8 V to 3.6 V * Operating temperature: - Extended industrial: *40°C to +105°C * Packages - 24-ball fine pitch ball grid array (FBGA) * Restriction of hazardous substances (RoH.

CY15B116QSN-Infineon.pdf

CY15V116QSN Datasheet Preview — This datasheet PDF includes multiple part numbers: CY15V116QSN, CY15B116QSN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY15V116QSN, CY15B116QSN

Manufacturer:

Infineon ↗

File Size:

951.92 KB

Description:

16Mb Ultra Ferroelectric RAM

Note:

This datasheet PDF includes multiple part numbers: CY15V116QSN, CY15B116QSN.
Please refer to the document for exact specifications by model.

CY15V116QSN Features

* 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced h

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CY15B116QSN 16Mb Ultra Ferroelectric RAM Infineon

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