CY15B101N Datasheet - Cypress Semiconductor

CY15B101N 1-Mbit (64K x 16) Automotive F-RAM Memory

CY15B101N Features

* 1-Mbit ferroelectric random access memory (F-RAM™) logically organized as 64K × 16

* Configurable as 128K × 8 using UB and LB

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (see the Data Retention and Endurance table)

* NoDelay™ writes

* Page-mod

Datasheet Details

CY15B101N

Cypress Semiconductor

386.63 KB

1-mbit (64k x 16) automotive f-ram memory.

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