CY15B104Q Datasheet - Cypress Semiconductor

CY15B104Q, 4-Mbit (512 K x 8) Serial (SPI) F-RAM

CY15B104Q 4-Mbit (512 K × 8) Serial (SPI) F-RAM 4-Mbit (512 K × 8) Serial (SPI) F-RAM .
The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process.

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Datasheet Details

Part number:

CY15B104Q

Manufacturer:

Cypress Semiconductor

File Size:

829.47 KB

Description:

4-Mbit (512 K x 8) Serial (SPI) F-RAM

Features

* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
* High-endurance 100 trillion (1014) read/writes
* 151-year data retention (See the Data Retention and Endurance table)
* NoDelay™ writes
* Advanced high-reliability ferroelectric process
* V

Applications

* requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The CY15B104Q provides substantial benefits to users of serial EEPROM

CY15B104Q Distributors

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CY15B104Q 4-Mbit 512 Serial SPI F-RAM Cypress Semiconductor

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