CY15B104Q

4-Mbit (512 K x 8) Serial (SPI) F-RAM

Cypress Semiconductor

CY15B104Q Features

* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (See the Data Retention and Endurance table)

* NoDelay™ writes

* Advanced high-reliability ferroelectric process

* V

CY15B104Q General Description

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and s.

CY15B104Q Datasheet (829.47 KB)

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Part number:

CY15B104Q

Manufacturer:

Cypress Semiconductor

File Size:

829.47 KB

Description:

4-mbit (512 k x 8) serial (spi) f-ram.

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TAGS

CY15B104Q 4-Mbit 512 Serial SPI F-RAM Cypress Semiconductor

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CY15B104Q Features

CY15B104Q General Description

Datasheet Details

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