CY15B104Q Datasheet, F-ram, Cypress Semiconductor

CY15B104Q Features

• F-ram
• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
• High-endurance 100 trillion (1014) read/writes
• 151-year data retention (

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Part number:

CY15B104Q

Manufacturer:

Cypress Semiconductor

File Size:

829.47kb

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📄 Datasheet

Description:

4-mbit (512 k x 8) serial (spi) f-ram. The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-R

CY15B104Q Application

• Applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demandin

TAGS

CY15B104Q

Cypress Semiconductor

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