CY15B104Q - 4-Mbit (512 K x 8) Serial (SPI) F-RAM
The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process.
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.
It provides reliable data retention for 151 years while eliminating the complexities, overhead, and s
CY15B104Q Features
* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
* High-endurance 100 trillion (1014) read/writes
* 151-year data retention (See the Data Retention and Endurance table)
* NoDelay™ writes
* Advanced high-reliability ferroelectric process
* V
