Datasheet Details
- Part number
- CY15B104Q
- Manufacturer
- Cypress Semiconductor
- File Size
- 829.47 KB
- Datasheet
- CY15B104Q-CypressSemiconductor.pdf
- Description
- 4-Mbit (512 K x 8) Serial (SPI) F-RAM
CY15B104Q Description
CY15B104Q 4-Mbit (512 K × 8) Serial (SPI) F-RAM 4-Mbit (512 K × 8) Serial (SPI) F-RAM .
The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process.
CY15B104Q Features
* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
* High-endurance 100 trillion (1014) read/writes
* 151-year data retention (See the Data Retention and Endurance table)
* NoDelay™ writes
* Advanced high-reliability ferroelectric process
* V
CY15B104Q Applications
* requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The CY15B104Q provides substantial benefits to users of serial EEPROM
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