CY15B104Q Datasheet - Cypress Semiconductor

CY15B104Q 4-Mbit (512 K x 8) Serial (SPI) F-RAM

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and s.

CY15B104Q Features

* 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (See the Data Retention and Endurance table)

* NoDelay™ writes

* Advanced high-reliability ferroelectric process

* V

CY15B104Q-CypressSemiconductor.pdf