CY15B116QSN Datasheet - Infineon

CY15B116QSN, 16Mb Ultra Ferroelectric RAM

CY15B116QSN, CY15V116QSN 16Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 2048K × 8, 108 MHz, extended industrial .
Low-voltage operation: - CY15V116QSN: VDD = 1. Operating temperature: - Extended.

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Datasheet Details

Part number:

CY15B116QSN

Manufacturer:

Infineon ↗

File Size:

951.92 KB

Description:

16Mb Ultra Ferroelectric RAM

Features

* 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced h

Applications

* requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash can cause data loss. The CY15x116QSN combines a 16-Mb F-RAM with the high-speed quad SPI (QPI) SDR an

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CY15B116QSN 16Mb Ultra Ferroelectric RAM Infineon

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