CY15B102N

2-Mbit (128K x 16) Automotive F-RAM Memory

Cypress Semiconductor

* 2-Mbit ferroelectric random access memory (F-RAM™) logically organized as 128K × 16

* Configurable as 256K × 8 using UB and LB

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (see the Data Retention and Endurance table)

* NoDelay™ writes

* Page-mo

CY15B102N

Cypress Semiconductor

430.86 KB

2-mbit (128k x 16) automotive f-ram memory.

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