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SDT12S60
Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery
thinQ! SiC Schottky Diode
Product Summary VRRM Qc IF 600 30 12
PG-TO220-2-2.
V nC A
Type SDT12S60
Package PG-TO220-2-2.
Ordering Code Q67040-S4470
Marking D12S60
Pin 1 C
Pin 2 A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
Symbol IF IFRMS
Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.
D12S60 Datasheet
