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DF200R07W2H3_B77 Datasheet - Infineon

IGBT

DF200R07W2H3_B77 Features

* Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat

* Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact

DF200R07W2H3_B77 Datasheet (732.34 KB)

Preview of DF200R07W2H3_B77 PDF

Datasheet Details

Part number:

DF200R07W2H3_B77

Manufacturer:

Infineon ↗

File Size:

732.34 KB

Description:

Igbt.

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DF200R07W2H3_B77 IGBT Infineon

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