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DF23MR12W1M1P_B11 - MOSFET

Key Features

  • CoolSiCTM Schottky diode gen 5.
  • High current density.
  • Low inductive design.
  • Low switching losses Mechanical Features.
  • Integrated NTC temperature sensor.
  • PressFIT contact technology.
  • Rugged mounting due to integrated mounting clamps.
  • Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Productio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF23MR12W1M1P_B11 EasyPACK™ModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC/TIM EasyPACK™modulewithCoolSiC™TrenchMOSFETandPressFIT/NTC/TIM VorläufigeDaten/PreliminaryData PotentielleAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiCTMSchottkyDiodeGen5 • HoheStromdichte • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern • Thermisches Interface Material bereits aufgetragen - VDSS = 1200V ID nom = 25A / IDRM = 50A PotentialApplications • Solarapplications ElectricalFeatures • CoolSiCTMSchottkydiodegen5 • Highcurrentdensity • Lowinductivedesign • Lowswitchinglosses MechanicalFeatures •