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DF200R07W2H3_B77 - IGBT

General Description

Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module Table of contents Table of contents Description

Key Features

  • Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat.
  • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF200R07W2H3_B77 EasyPACK™ 2B module EasyPACK™ 2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications • Three-level applications • Motor drives • Solar applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.