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DF200R12W1H3F_B11 - IGBT

Key Features

  • CoolSiC (TM) Schottky diode gen 5.
  • High speed IGBT H3.
  • Low switching losses Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • Compact design.
  • PressFIT contact technology Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF200R12W1H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik J VCES = 1200V IC nom = 30A / ICRM = 60A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • HighspeedIGBTH3 • Lowswitchinglosses MechanicalFeatures • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperatu