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Infineon Technologies Electronic Components Datasheet

F3L100R07W2E3_B11 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
F3L100R07W2E3_B11
EasyPACKModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundPressFIT/NTC
EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC
VorläufigeDaten/PreliminaryData
J
TypischeAnwendungen
• 3-Level-Applikationen
• Motorantriebe
• SolarAnwendungen
• USV-Systeme
ElektrischeEigenschaften
• ErhöhteSperrspannungsfestigkeitauf650V
• NiederinduktivesDesign
• NiedrigeSchaltverluste
• NiedrigesVCEsat
MechanischeEigenschaften
Al2O3 Substrat mit kleinem thermischen
Widerstand
• KompaktesDesign
• PressFITVerbindungstechnik
Robuste Montage durch integrierte
Befestigungsklammern
VCES = 650V
IC nom = 100A / ICRM = 200A
TypicalApplications
• 3-Level-Applications
• MotorDrives
• SolarApplications
• UPSSystems
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• Lowinductivedesign
• LowSwitchingLosses
• LowVCEsat
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DK
approvedby:MB
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2013-11-05
revision:2.1
ULapproved(E83335)
1


Infineon Technologies Electronic Components Datasheet

F3L100R07W2E3_B11 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
F3L100R07W2E3_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 60°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
650
100
117
200
300
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 100 A, VGE = 15 V
IC = 100 A, VGE = 15 V
IC = 100 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 1,60 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 100 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 100 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 100 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 100 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 100 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3200 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 3,3
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 100 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 3,3
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 25°C
tP 6 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,45 1,90
1,60
1,70
V
V
V
4,9 5,8 6,5 V
 1,10  µC
 2,0 
 6,20  nF
 0,19  nF
  1,0 mA
  400 nA
0,05
 0,06 
0,065
0,025
 0,03 
0,03
0,24
 0,26 
0,27
0,05
 0,065 
0,075
0,55
 0,85 
0,95
2,50
 3,35 
3,50

700
500

µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
A
 0,45 0,50 K/W
 0,50
K/W
-40  150 °C
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
2


Part Number F3L100R07W2E3_B11
Description IGBT-Module
Maker Infineon
Total Page 11 Pages
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