File Size : 907.29KB ·
8 hits
• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1014) read/writes - 121-year data retention (See the Data retention and endurance table) - No delay writes - Advanced high-reliability ferroelectric process
• Very fast SPI - Up to 33 M.
