IAUC60N04S6N031H
IAUC60N04S6N031H is Power Transistor manufactured by Infineon.
OptiMOS™- 6 Power-Transistor
Product Summary
Features
- OptiMOS™
- power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 3.1 mW 60 A
PG-TDSON-8-56
- Half-Bridge
- N-channel
- Enhancement mode
- Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Type
Package
Marking
IAUC60N04S6N031H PG-TDSON-8-56 6N04N031
Maximum ratings per channel, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation...
