* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.

* Breakdown voltage tested at 14 mA2)
* Optimized for high temperature operation Benefits
* System efficie.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer .

IDK02G120C5

IDK02G65C5

IDK03G65C5

IDK04G65C5

IDK05G120C5

IDK05G65C5

IDK08G120C5

IDK08G65C5

IDK09G65C5

IDK10G120C5

IDK10G65C5

IDK12G65C5

ID100