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IDK09G65C5 Datasheet, Infineon

IDK09G65C5 diode equivalent, silicon carbide diode.

IDK09G65C5 Avg. rating / M : 1.0 rating-14

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IDK09G65C5 Datasheet

Features and benefits


* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.

Application


* Breakdown voltage tested at 20 mA2)
* Optimized for high temperature operation Benefits
* System efficie.

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer .

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IDK09G65C5 Page 1 IDK09G65C5 Page 2 IDK09G65C5 Page 3

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