* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform
IDM08G120C5 Datasheet (852.81 KB)
IDM08G120C5
852.81 KB
Diode.
Diode Silicon Carbide Schottky Diode IDM08G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-07-22 Industrial Power.
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